BAV23C-V document number 81902 rev. 1.1, 12-aug-10 vishay semiconductors www.vishay.com 1 1 8 10 8 12 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal switching diode, dual features ? silicon epitaxial planar diode ? fast switching dual diode with common cathode ? these diodes are also available as single diodes in the same case style of sot-23 case with type designation of bas21-v, in the sod-123 case with the type designation of bav21w-v, and in the sod-323 case with the type designation of bav21ws-v ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: sot-23 weight: approx. 8.8 mg packaging codes/options: gs18/10k per 13" reel (8 mm tape), 10k/box gs08/3k per 7" reel (8 mm tape), 15k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified notes: 1) measured under pulse conditions; pulse time = t p 0.3 ms 2) device on fiberglass substrate part ordering code marking remarks BAV23C-V BAV23C-V-gs18 or BAV23C-V-gs08 kt6 tape and reel parameter test condition symbol value unit continuous reverse voltage v r 200 v repetitive peak reverse voltage v rrm 250 v non-repetitive peak forward current t = 1 s i fsm 9a non-repetitive peak forward surge current t = 1 s i fsm 0.5 a maximum average forward rectified current i f(av) 200 1) ma forward continuous current i f 400 2) ma repetitive peak forward current i frm 625 ma power dissipation p tot 350 2) mw
www.vishay.com 2 document number 81902 rev. 1.1, 12-aug-10 BAV23C-V vishay semiconductors for technical questions within your r egion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com thermal characteristics t amb = 25 c, unless otherwise specified note: 1) device on fiberglass substrate electrical characteristics t amb = 25 c, unless otherwise specified package dimensions in millimeters (inches) : sot-23 parameter test condition symbol value unit thermal resistance junction to ambient air r thja 357 1) k/w junction temperature t j 150 c storage temperature range t j = t stg - 65 to + 150 c parameter test condition symbol min. ty p. max. unit reverse breakdown voltage i r = 100 a, t p = 300 s v (br) 250 v forward voltage i f = 100 ma v f 1000 mv i f = 200 ma v f 1250 mv reverse current v r = 200 v i r 100 na v r = 200 v, t j = 150 c i r 100 a dynamic forward resistance i f = 10 ma r f 5 diode capacitance v r = 0, f = 1 mhz c d 5pf reverse recovery time i f = i r = 30 ma, r l = 100 i r = 3 ma t rr 50 ns foot print recommendation: rev. 8 - date: 23.sept.2009 17418 document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.95 (0.037) 0.95 (0.037) 2 (0.079) 0.7 (0.028) 0.9 (0.035) 0 to 8 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)
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